ion-implantation defect

См. также в других словарях:

• Ion channel — Not to be confused with: Ion Television or Ion implantation. Schematic diagram of an ion channel. 1 channel domains (typically four per channel), 2 outer vestibule, 3 selectivity filter, 4 diameter of selectivity filter, 5 phosphorylation site, 6 …   Wikipedia

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• Collision cascade — A classical molecular dynamics computer simulation of a collision cascade in Au induced by a 10 keV Au self recoil. This is a typical case of a collision cascade in the heat spike regime. Each small sphere illustrates the position of an atom, in… …   Wikipedia

• Threshold displacement energy — The threshold displacement energy Td is the minimum kinetic energy that an atom in a solid needs to be permanently displaced from its lattice site to a defect position. It is also known as displacement threshold energy or just displacement energy …   Wikipedia

• Nitrogen-vacancy center — The nitrogen vacancy center (N V center) is one of numerous point defects in diamond. Its most explored and useful property is photoluminescence, which can be easily detected from an individual N V center. Electron spins at N V centers, localized …   Wikipedia

• Crystallographic defects in diamond — Synthetic diamonds of various colors grown by the high pressure high temperature technique, the diamond size is 2 mm …   Wikipedia

• Wafer (electronics) — Polished 12 and 6 silicon wafers. The flat cut into the right wafer indicates its doping and crystallographic orientation (see below) …   Wikipedia

• Radioactive waste — 2007 ISO radioactivity danger logo, designed in part for long term radioactive waste depositories which might survive into a far future time in which all knowledge of the meaning of present common radiation danger symbols and signs has been lost… …   Wikipedia

• Diffraction topography — (short: topography ) is an X ray imaging technique based on Bragg diffraction. Diffraction topographic images ( topographs ) record the intensity profile of a beam of X rays (or, sometimes, neutrons) diffracted by a crystal. A topograph thus… …   Wikipedia

• Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 …   Wikipedia

• Dopant Activation — is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host.[1] The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common… …   Wikipedia